LX3055 p roduction d ata s heet obsolete product ? not recommended for new design microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2004 rev. 1.1, 2005-09-15 www. microsemi . com coplanar ingaas/inp pin photo diode tm ? description microsemi?s ingaas/inp pin photo diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. the device series offers high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. the LX3055 4 gbps coplanar waveguide photodiode is currently offered in die form allowing manufacturers the versatility of custom assembly configurations including traditional wirebond or flip chip assembly this device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com product highlight ? coplanar design (gnd-signal- gnd) 50 ? characteristic impedance ? 125m standard pad pitch for ease of test ? large 75m x 75m pad size for ease of packaging ? wire bond or flip chip capability key features ? LX3055 single die ? coplanar waveguide , 50 ? ? high responsivity ? low dark current ? high bandwidth ? anode/cathode on illuminated side ? 125m pad pitch ? die good for bond wire or flip chip applications applications ? 4 gigabit fiber channel ? 1310nm catv optical applications ? sonet/sdh oc-48, atm ? 2.5gb/s or 3.125gb/s ethernet ? 1310nm vcsel receivers ? optical backplane benefits ? large wire bond contact pads ? low contact resistance ? wire bond or flip chip applications ? ground- signal-ground pad configuration for standard rf test probes l l x x 3 3 0 0 5 5 5 5
LX3055 p roduction d ata s heet obsolete product ? not recommended for new design microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2004 rev. 1.1, 2005-09-15 www. microsemi . com coplanar ingaas/inp pin photo diode tm ? absolute maximum ratings operating junction temper ature...................................................................... -20 to +85 c storage temperature ra nge ........................................................................... -55 to +125 c maximum soldering temperature (10 seconds maxi mum) ....................................... 260 c note: exceeding these ratings could cause damage to the device. package pin out p contact n contact (cathode) n contact LX3055 electrical characteristics test conditions: t a = 25c, v r = 2v LX3055 parameter symbol test conditions min typ max units ` electrical characteristics active area diameter 60 m vr = 2v, = 1550nm 0.85 1.0 responsivity 1 r vr = 2v, = 1310nm 0.80 0.90 a/w dark current i d vr = 5v 0.6 6 na breakdown voltage bv r ir = 10a 30 44 v capacitance c vr = 2v 0.35 0.40 pf bandwidth 2 bw vr = 2v, = 1550nm @ - 3db 6.5 8 ghz note: 1. antireflective coating is ? wavelengt h @ 1430nm covering 1310 and 1550nm applications 2. bandwidth is measured @ -3db electrical power (photocurrent drops to 71% of dc value) application circuits r diode c shunt l ser1 r ser c diode l ser2 cpw pads figure x ? typical vrm application results rset (ohm) lser1 (ph) lser2 (p h) cshunt (ff) cdiode (ff) rdiode (m ohm) LX3055 20.1 1.6 1.5 7.1 311 730 p p a a c c k k a a g g e e d d a a t t a a
LX3055 p roduction d ata s heet obsolete product ? not recommended for new design microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2004 rev. 1.1, 2005-09-15 www. microsemi . com coplanar ingaas/inp pin photo diode tm ? spare table 12.5um a n contact (cathode) p contact n contact 125.0 250.0 325.0 450um 50um 145um 75um 75um y p w v x die dimension, m pad dimension, m active area, m (a) y x w v pad pitch, m (p) die thickness, m 60 450 450 75 75 125 152 notes precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling ingaas pin photo diode. production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. m m e e c c h h a a n n i i c c a a l l s s
LX3055 p roduction d ata s heet obsolete product ? not recommended for new design microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2004 rev. 1.1, 2005-09-15 www. microsemi . com coplanar ingaas/inp pin photo diode tm ? LX3055 bandwidth (vr = 1.0v~ 5.0v, at 1550 nm ) 3 4 5 6 7 8 9 10 11 12 012345678910 frequency ghz relative s21 (db) vr=1.0v: bw=7.15ghz vr=1.5v: bw=7.50ghz vr=2v: bw=8.00ghz vr=3v: bw=9.55ghz vr=5v: bw=9.95ghz c-v of LX3055 0.25 0.3 0.35 0.4 0.45 0510 reverse bias (v) capacitance (pf) dark current vs voltage over temperature 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 2 4 6 8 10121416 reverse bias voltage (v) dark current (na) -45 deg c -10 deg c 25 deg c 50 deg c 85 deg c 110 deg c breakdown voltage vs. temperature 35 40 45 50 55 -60 -40 -20 0 20 40 60 80 100 120 temperature ( deg c) breakdown voltage (v) c c h h a a r r t t s s
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